Changing the crystal face of gallium nitride

Ultra-low threshold gallium nitride photonic crystal nanobeam laser

GaN-based materials are well-recognized for their exceptional optical qualities, particularly in the blue and UV parts of the spectrum. In addition, their wide bandgaps allow efficient operation at room temperature and higher. This work will describe the room-temperature performance of optically-pumped GaN photonic crystal (PC) nanobeam lasers, with thresholds as low as 9.1 μJ/cm2, the lowest r...

Gallium Nitride Photoconductive Detectors

Since 1994, the Applied Physics Laboratory has been collaborating with NASA Goddard Space Flight Center to develop photodetectors based on gallium nitride and aluminum gallium nitride material produced in the Milton S. Eisenhower Research and Technology Development Center. This article describes the results of our collaboration and highlights the development of gallium nitride photodetectors wi...

Ultralow wear of gallium nitride

Development of Gallium Nitride Substrates

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

The Ammonothermal Crystal Growth of Gallium Nitride - A Technique on the Up Rise

| Gallium nitride (GaN) is one of the most important wide band gap semiconductor materials in modern technology with even higher expectations for future applications it is ought to play a crucial role. Among this, the growth of lattice and thermally matched GaN substrates for the GaN device technology takes an essential piece. This paper is reporting on the achievements in the ammonothermal gro...